IPP100N08N3 G
Manufacturer:
Infineon
Mfr.Part #:
IPP100N08N3 G
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole N-Channel number of channels:1 100 W 80 V Continuous Drain Current (ID):70 A 35 nC
| Parameter | Value |
|---|---|
| Gate Charge | 35 nC |
| Gate to Source Threshold Voltage | 2 V |
| Continuous Drain Current (ID) | 70 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 8.4 mΩ |
| Input capacitance | 2.41 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 100 W |
| Drain to Source Breakdown Voltage (Vds) | 80 V |
| Number of Channels | 1 |
| Packaging | Tube |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
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